Datasheets

TK40J20D,S1F(O

Current - Continuous Drain (Id) @ 25°C :

40A (Ta)

Drain to Source Voltage (Vdss) :

200 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

100 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

4300 pF @ 100 V

Mounting Type :

Through Hole

Operating Temperature :

150°C

Package / Case :

TO-3P-3, SC-65-3

Part Status :

Active

Power Dissipation (Max) :

260W (Tc)

Rds On (Max) @ Id, Vgs :

44mOhm @ 20A, 10V

Supplier Device Package :

TO-3P(N)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 1mA