Datasheets

IRFU1018EPBF

Current - Continuous Drain (Id) @ 25°C :

56A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

69 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2290 pF @ 50 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Part Status :

Obsolete

Power Dissipation (Max) :

110W (Tc)

Rds On (Max) @ Id, Vgs :

8.4mOhm @ 47A, 10V

Supplier Device Package :

IPAK (TO-251AA)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 100µA