Datasheets

RTQ025P02TR

Current - Continuous Drain (Id) @ 25°C :

2.5A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

6.4 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

580 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Part Status :

Active

Power Dissipation (Max) :

1.25W (Ta)

Rds On (Max) @ Id, Vgs :

100mOhm @ 2.5A, 4.5V

Supplier Device Package :

TSMT6 (SC-95)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

2V @ 1mA