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Product overview

Product number
IPL60R180P6AUMA1
Manufacturer
Rochester Electronics
Catalog
Transistors - FETs, MOSFETs - Single
product description
HIGH POWER_LEGACY

Documents and media

Datasheets
IPL60R180P6AUMA1

Product Details

Current - Continuous Drain (Id) @ 25°C :
22.4A (Tc)
Drain to Source Voltage (Vdss) :
600 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
2080 pF @ 100 V
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
4-PowerTSFN
Part Status :
Active
Power Dissipation (Max) :
176W (Tc)
Rds On (Max) @ Id, Vgs :
180mOhm @ 9A, 10V
Supplier Device Package :
PG-VSON-4
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4.5V @ 750µA

product description

HIGH POWER_LEGACY

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