Datasheets

SI4056ADY-T1-GE3

Current - Continuous Drain (Id) @ 25°C :

5.9A (Ta), 8.3A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

29 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1330 pF @ 50 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Part Status :

Active

Power Dissipation (Max) :

2.5W (Ta), 5W (Tc)

Rds On (Max) @ Id, Vgs :

29.2mOhm @ 5.9A, 10V

Supplier Device Package :

8-SOIC

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA