Datasheets

CSD19537Q3

Current - Continuous Drain (Id) @ 25°C :

50A (Ta)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

21 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1680 pF @ 50 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerVDFN

Part Status :

Active

Power Dissipation (Max) :

2.8W (Ta), 83W (Tc)

Rds On (Max) @ Id, Vgs :

14.5mOhm @ 10A, 10V

Supplier Device Package :

8-VSON (3.3x3.3)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.6V @ 250µA