Datasheets

IMW65R039M1HXKSA1

Current - Continuous Drain (Id) @ 25°C :

46A (Tc)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

18V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

41 nC @ 18 V

Input Capacitance (Ciss) (Max) @ Vds :

1393 pF @ 400 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-247-3

Part Status :

Active

Power Dissipation (Max) :

176W (Tc)

Rds On (Max) @ Id, Vgs :

50mOhm @ 25A, 18V

Supplier Device Package :

PG-TO247-3-41

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+20V, -2V

Vgs(th) (Max) @ Id :

5.7V @ 7.5mA