Datasheets

SI4922BDY-T1-GE3

Current - Continuous Drain (Id) @ 25°C :

8A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2070pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Part Status :

Active

Power - Max :

3.1W

Rds On (Max) @ Id, Vgs :

16mOhm @ 5A, 10V

Supplier Device Package :

8-SOIC

Vgs(th) (Max) @ Id :

1.8V @ 250µA