Datasheets

CAS120M12BM2

Current - Continuous Drain (Id) @ 25°C :

193A (Tc)

Drain to Source Voltage (Vdss) :

1200V (1.2kV)

FET Feature :

Silicon Carbide (SiC)

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

378nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds :

6470pF @ 800V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

Module

Part Status :

Active

Power - Max :

925W

Rds On (Max) @ Id, Vgs :

16mOhm @ 120A, 20V

Supplier Device Package :

Module

Vgs(th) (Max) @ Id :

2.6V @ 6mA (Typ)