Product overview
- Product number
- F1T6GHA1G
- Manufacturer
- Taiwan Semiconductor
- Catalog
- Diodes - Rectifiers - Single
- product description
- DIODE GEN PURP 800V 1A TS-1
Documents and media
- Datasheets
- F1T6GHA1G
Product Details
- Capacitance @ Vr, F :
- 15pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 1A
- Current - Reverse Leakage @ Vr :
- 5 µA @ 800 V
- Diode Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- T-18, Axial
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 500 ns
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Supplier Device Package :
- TS-1
- Voltage - DC Reverse (Vr) (Max) :
- 800 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.3 V @ 1 A
product description
DIODE GEN PURP 800V 1A TS-1
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